Piecewise Analytical Transient Model for Power Switching Device Commutation Unit

被引:59
作者
Shi, Bochen [1 ]
Zhao, Zhengming [1 ]
Zhu, Yicheng [1 ]
机构
[1] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
Event-driven simulation; power switching device modeling; switching transients; ELECTROTHERMAL MODEL; IGBT MODEL; REAL-TIME; CIRCUIT; SIMULATION; VACUUM; DIODE;
D O I
10.1109/TPEL.2018.2867735
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Taking switching transients of switching devices into consideration in design and simulation of power electronic systems has long been a huge obstacle. Sufficient accuracy has to be ensured, meanwhile more significantly the transient model has to be practical, i.e., providing a convergent result with an acceptable solving speed and a convenient parameter extraction technique. Aiming at both targets, this paper proposes a piecewise analytical transient (PAT) model for switching device commutation unit, taking an IGBT-p-i-n diode pair as an example. A piecewise time-varying voltage source-current source pair is utilized to model the IGBT-p-i-n diode pair. With sufficient accuracy, PAT modeling methodology noticeably increases the solving speed and improves the convergence of converter simulations. Model expressions and datasheet-driven parameter extractions are illustrated in detail. Experimental and simulated results are presented and compared to validate both the accuracy and the practicability of the proposed PAT model, expected to be employed in transient simulations of power electronic systems.
引用
收藏
页码:5720 / 5736
页数:17
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