Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

被引：159

作者：

Park, Min Hyuk ^{[1
]}

Kim, Han Joon

Kim, Yu Jin

Lee, Woongkyu

Kim, Hyo Kyeom

Hwang, Cheol Seong

机构：

[1] Seoul Natl Univ, WCU Hybrid Mat Program, Dept Mat Sci & Engn, Seoul 151744, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

INDUCED DEGRADATION; HYDROGEN; CAPACITORS; HFO2; PB(ZR; TI)O-3; DEPENDENCE; SI;

D O I：

10.1063/1.4798265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of forming gas annealing (FGA) on the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) films were examined. Although the H-incorporation during FGA degrades the ferroelectric properties of Hf0.5Zr0.5O2 films, the degree of degradation was much lower compared with other ferroelectrics, such as Pb(Zr,Ti)O-3. Pt worked as a catalyst for H-incorporation, and maximum 2P(r) loss of similar to 40% occurred. However, the insertion of a similar to 20-nm-thick TiN layer between Pt and Hf0.5Zr0.5O2 decreased the degradation to similar to 12%. Hf0.5Zr0.5O2 is more resistant to degradation by FGA compared with the conventional ferroelectrics, which is a highly promising result for next-generation ferroelectric memory. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798265]

引用

页数：4

共 21 条

[1] Effect of hydrogen on Pb(Zr, Ti)O3-based ferroelectric capacitors [J].

Aggarwal, S ;

Perusse, SR ;

Tipton, CW ;

Ramesh, R ;

Drew, HD ;

Venkatesan, T ;

Romero, DB ;

Podobedov, VB ;

Weber, A .

APPLIED PHYSICS LETTERS, 1998, 73 (14) :1973-1975

[2] Ferroelectricity in hafnium oxide thin films [J].

Boescke, T. S. ;

Mueller, J. ;

Braeuhaus, D. ;

Schroeder, U. ;

Boettger, U. .

APPLIED PHYSICS LETTERS, 2011, 99 (10)

[3] Thermochemical behavior of hydrogen in hafnium silicate films on Si [J].

Driemeier, C. ;

Chambers, J. J. ;

Colombo, L. ;

Baumvol, I. J. R. .

APPLIED PHYSICS LETTERS, 2006, 89 (05)

[4] Some mechanisms for the incorporation of hydrogen in Hf-based gate dielectric films on Si [J].

Driemeier, C. ;

Baumvol, I. J. R. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (04) :945-950

[5] Hydrogen trapping in oxygen-deficient hafnium silicates [J].

Fonseca, L. R. C. ;

Xavier, A. L., Jr. ;

Ribeiro, M., Jr. ;

Driemeier, C. ;

Baumvol, I. J. R. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (04)

[6] HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition -: art. no. 152904 [J].

Frank, MM ;

Wilk, GD ;

Starodub, D ;

Gustafsson, T ;

Garfunkel, E ;

Chabal, YJ ;

Grazul, J ;

Muller, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

[7] Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O-3 and SrBi2Ta2O9 thin films [J].

Han, JP ;

Ma, TP .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1267-1269

[8] Emerging memories: resistive switching mechanisms and current status [J].

Jeong, Doo Seok ;

Thomas, Reji ;

Katiyar, R. S. ;

Scott, J. F. ;

Kohlstedt, H. ;

Petraru, A. ;

Hwang, Cheol Seong .

REPORTS ON PROGRESS IN PHYSICS, 2012, 75 (07)

[9] H-related defect complexes in HfO2:: A model for positive fixed charge defects [J].

Kang, J ;

Lee, EC ;

Chang, KJ ;

Jin, YG .

APPLIED PHYSICS LETTERS, 2004, 84 (19) :3894-3896

[10] The nature of hydrogen in x-ray photoelectron spectroscopy: General patterns from hydroxides to hydrogen bonding [J].

Kerber, SJ ;

Bruckner, JJ ;

Wozniak, K ;

Seal, S ;

Hardcastle, S ;

Barr, TL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03) :1314-1320

← 1 2 3 →