Improved quality (11(2)over-bar-0) a-plane GaN with sidewall lateral epitaxial overgrowth

被引：117

作者：

Imer, BM ^{[1
]}

Wu, F

DenBaars, SP

Speck, JS

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, NICP, ERATO, JST Grp, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 06期

基金：

美国国家科学基金会; 日本科学技术振兴机构;

关键词：

D O I：

10.1063/1.2172159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a technique to reduce the extended defect densities in a-plane GaN deposited on r-plane sapphire. The SiO2 lateral epitaxial overgrowth mask consisted of < 1100 >(GaN) stripes. Both the mask and GaN were etched through the mask openings and the lateral growth was initiated from the etched c-plane GaN sidewalls, and the material was grown over the mask regions until a smooth coalesced film was achieved. Threading dislocation densities in the range of 10(6)-10(7) cm(-2) were realized throughout the film surface. The on-axis and off-axis full width at half maximum value and surface roughness were 0.082 degrees, 0.114 degrees, and 0.622 nm, respectively. (c) 2006 American Institute of Physics.

引用

页数：3

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