Monte Carlo simulation of homoepitaxial growth on two-component compound semiconductor surfaces

被引:26
作者
Ishii, A [1 ]
Kawamura, T
机构
[1] Tottori Univ, Dept Appl Math & Phys, Tottori 6808552, Japan
[2] Univ Yamanashi, Dept Phys, Kofu, Yamanashi 4008510, Japan
关键词
anisotropic islands; GaAs(100); III-V compound semiconductors; MBE growth; Monte Carlo simulation; two-component semiconductor surfaces;
D O I
10.1016/S0039-6028(99)00608-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have studied some characteristic behaviors of homoepitaxial growth on III-V semiconductor surfaces by taking account of two components explicitly in a Monte Carlo simulation. In addition to the surface step density, the coverage of cation or anion in the topmost layer shows oscillatory behavior during the growth, which varies as a function of the beam fluxes as well as the temperature. We have also studied on the effects of barrier energies to hopping for cation and anion, of the anisotropy of the barrier energies and of the beam flux ratio between cation and anion. By taking the growth on GaAs(100) as an example, we compare the simulated results with the reported experimental ones. The growth mode transition temperature observed in experiment is reproduced by using anisotropic hopping barrier energy. The island shape changes during the recovery process to anisotropic rectangular form with the longer dimension along the As dimer direction, which is in good agreement with the reported experimental observation. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:38 / 50
页数:13
相关论文
共 17 条
[1]   THEORY OF HOMOEPITAXY ON SI(001) .1. KINETICS DURING GROWTH [J].
CLARKE, S ;
WILBY, MR ;
VVEDENSKY, DD .
SURFACE SCIENCE, 1991, 255 (1-2) :91-110
[2]   GROWTH-MECHANISM FOR MOLECULAR-BEAM EPITAXY OF GROUP-IV SEMICONDUCTORS [J].
CLARKE, S ;
VVEDENSKY, DD .
PHYSICAL REVIEW B, 1988, 37 (11) :6559-6562
[3]   Kinetics of homoepitaxial growth on GaAs(100) studied by two-component Monte Carlo simulation [J].
Ishii, A ;
Kawamura, T .
APPLIED SURFACE SCIENCE, 1998, 130 :403-408
[4]   REAL-TIME OBSERVATION OF GAAS (001) SURFACES DURING MOLECULAR-BEAM EPITAXY BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].
ISU, T ;
WATANABE, A ;
HATA, M ;
KATAYAMA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2259-L2261
[5]   A Monte Carlo simulation study on the structural change of the GaAs(001) surface during MBE growth [J].
Ito, T ;
Shiraishi, K .
SURFACE SCIENCE, 1996, 357 (1-3) :486-489
[6]   TRANSIENT GROWTH IN MOLECULAR-BEAM EPITAXY OF SI ON SI(100) VICINAL SURFACES [J].
KAWAMURA, T ;
WILBY, MR .
SURFACE SCIENCE, 1993, 283 (1-3) :360-365
[7]   MONTE-CARLO SIMULATION OF THIN-FILM GROWTH ON SI SURFACES [J].
KAWAMURA, T .
PROGRESS IN SURFACE SCIENCE, 1993, 44 (01) :67-99
[8]   RELATION BETWEEN SURFACE STEP DENSITY AND RHEED INTENSITY [J].
KAWAMURA, T .
SURFACE SCIENCE, 1993, 298 (2-3) :331-335
[9]   GROWTH OF SEMICONDUCTOR HETEROSTRUCTURES ON PATTERNED SUBSTRATES - DEFECT REDUCTION AND NANOSTRUCTURES [J].
MADHUKAR, A .
THIN SOLID FILMS, 1993, 231 (1-2) :8-42
[10]  
MAKSYM PA, 1988, SEMICOND SCI TECH, V3, P549