Monolithic 3-D silicon photonics

被引：52

作者：

Koonath, P ^{[1
]}

Indukuri, T ^{[1
]}

Jalali, B ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2006年 / 24卷 / 04期

关键词：

cavity resonator filters; integrated optics; microresonators; monolithic integrated circuits; silicon-on-insulator (SOI) technology;

D O I：

10.1109/JLT.2006.871121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic CMOS compatible process has been developed to realize vertically integrated devices in silicon. The method involves the implantation of an oxygen into a patterned silicon substrate to form buried guiding structures. These buried devices are separated from a surface silicon layer by an intervening layer of silicon dioxide formed through the implantation process. Photolithography and etching is used to define devices on the surface silicon layer. The method has been utilized to realize the vertically coupled microdisk resonators and a variety of microresonator-based integrated optical elements. A new method for extraction of the unloaded Q of a cavity from its measured spectrum is also described.

引用

页码：1796 / 1804

页数：9

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