Insulating Behavior at the Neutrality Point in Single-Layer Graphene

被引：93

作者：

Amet, F. ^{[1
]}

Williams, J. R. ^{[2
]}

Watanabe, K. ^{[3
]}

Taniguchi, T. ^{[3
]}

Goldhaber-Gordon, D. ^{[2
]}

机构：

[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[3] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 21期

关键词：

Compendex;

D O I：

10.1103/PhysRevLett.110.216601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The fate of the low-temperature conductance at the charge-neutrality (Dirac) point in a single sheet of graphene on boron nitride is investigated down to 20 mK. As the temperature is lowered, the peak resistivity diverges with a power-law behavior and becomes as high as several megohms per square at the lowest temperature, in contrast with the commonly observed saturation of the conductivity. As a perpendicular magnetic field is applied, our device remains insulating and directly transitions to the broken-valley-symmetry, nu = 0 quantum Hall state, indicating that the insulating behavior we observe at zero magnetic field is a result of broken valley symmetry. Finally we discuss the possible origins of this effect.

引用

页数：5

共 32 条

[1] A self-consistent theory for graphene transport [J].

Adam, Shaffique ;

Hwang, E. H. ;

Galitski, V. M. ;

Das Sarma, S. .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 104 (47) :18392-18397

[2] Temperature-dependent transport in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Hone, J. ;

Stormer, H. L. ;

Kim, P. .

PHYSICAL REVIEW LETTERS, 2008, 101 (09)

[3] Observation of the fractional quantum Hall effect in graphene [J].

Bolotin, Kirill I. ;

Ghahari, Fereshte ;

Shulman, Michael D. ;

Stormer, Horst L. ;

Kim, Philip .

NATURE, 2009, 462 (7270) :196-199

[4] Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect [J].

Castro, Eduardo V. ;

Novoselov, K. S. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Dos Santos, J. M. B. Lopes ;

Nilsson, Johan ;

Guinea, F. ;

Geim, A. K. ;

Castro Neto, A. H. .

PHYSICAL REVIEW LETTERS, 2007, 99 (21)

[5] Random resistor network model of minimal conductivity in graphene [J].

Cheianov, Vadim V. ;

Fal'ko, Vladimir I. ;

Altshuler, Boris L. ;

Aleiner, Igor L. .

PHYSICAL REVIEW LETTERS, 2007, 99 (17)

[6] Selective transmission of Dirac electrons and ballistic magnetoresistance of n-p junctions in graphene [J].

Cheianov, Vadim V. ;

Fal'ko, Vladimir I. .

PHYSICAL REVIEW B, 2006, 74 (04)

[7] Charged-impurity scattering in graphene [J].

Chen, J. -H. ;

Jang, C. ;

Adam, S. ;

Fuhrer, M. S. ;

Williams, E. D. ;

Ishigami, M. .

NATURE PHYSICS, 2008, 4 (05) :377-381

[8] Disorder by order in graphene [J].

Das Sarma, S. ;

Hwang, E. H. ;

Li, Qiuzi .

PHYSICAL REVIEW B, 2012, 85 (19)

[9]

Dean CR, 2011, NAT PHYS, V7, P693, DOI [10.1038/NPHYS2007, 10.1038/nphys2007]

[10] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

← 1 2 3 4 →