Improved Electrical Conductivity of Graphene Films Integrated with Metal Nanowires

被引：290

作者：

Kholmanov, Iskandar N. ^{[1
,2
,3
]}

Magnuson, Carl W. ^{[1
,2
]}

Aliev, Ali E. ^{[4
]}

Li, Huifeng ^{[1
,2
]}

Zhang, Bin ^{[1
,2
]}

Suk, Ji Won ^{[1
,2
]}

Zhang, Li Li ^{[1
,2
]}

Peng, Eric ^{[1
,2
]}

Mousavi, S. Hossein ^{[5
,6
]}

Khanikaev, Alexander B. ^{[5
,6
]}

Piner, Richard ^{[1
,2
]}

Shvets, Gennady ^{[5
,6
]}

Ruoff, Rodney S. ^{[1
,2
]}

机构：

[1] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA

[2] Univ Texas Austin, Mat Sci & Engn Program, Austin, TX 78712 USA

[3] Univ Brescia, Dept Chem & Phys, CNR IDASC Sensor Lab, I-25133 Brescia, Italy

[4] Univ Texas Dallas, Alan G MacDiarmid NanoTech Inst, Richardson, TX 75083 USA

[5] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[6] Univ Texas Austin, Ctr Nano & Mol Sci & Technol, Austin, TX 78712 USA

来源：

NANO LETTERS | 2012年 / 12卷 / 11期

关键词：

Graphene; nanowires; transparent conductive films; electrochromic devices; CHEMICAL-VAPOR-DEPOSITION; TRANSPORT; MOBILITY;

D O I：

10.1021/nl302870x

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Polycrystalline graphene grown by chemical vapor deposition (CVD) on metals and transferred onto arbitrary substrates has line defects and disruptions such as wrinkles, ripples, and folding that adversely affect graphene transport properties through the scattering of the charge carriers. It is found that graphene assembled with metal nanowires (NWs) dramatically decreases the resistance of graphene films. Graphene/NW films with a sheet resistance comparable to that of the intrinsic resistance of graphene have been obtained and tested as a transparent electrode replacing indium tin oxide films in electrochromic (EC) devices. The successful integration of such graphene/NW films into EC devices demonstrates their potential for a wide range of optoelectronic device applications.

引用

页码：5679 / 5683

页数：5

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