Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface

被引：29

作者：

Aristov, VY

Le Lay, G

Zhilin, VM

Indlekofer, G

Grupp, C

Taleb-Ibrahimi, A

Soukiassian, P

机构：

[1] CNRS, CRMC2, F-13288 Marseille 09, France

[2] Univ Aix Marseille 1, UFR Sci Mat, Marseille, France

[3] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

[4] Univ Paris Sud, LURE, F-91405 Orsay, France

[5] CEA, DSM, DRECAM, SRSIM,Ctr Etud Saclay, F-91191 Gif Sur Yvette, France

[6] Univ Paris Sud, Dept Phys, F-91405 Orsay, France

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.60.7752

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use high-resolution photoemission spectroscopy to measure the dispersions of quantized energy levels located in an accumulation two-dimensional electron channel created in the subsurface region of a semiconductor. The experiments are performed for InAs(110) covered by about 10(-2) Cs monolayer. From the band dispersion, the average effective mass of the carriers in the channel is determined. Our findings are further supported by self-consistent calculations and model-function curve fitting. [S0163-1829(99)07735-8].

引用

页码：7752 / 7755

页数：4

共 11 条

[1]

Aristov VY, 1998, SURF REV LETT, V5, P235, DOI 10.1142/S0218625X98000438

[2] CS-INDUCED HIGHEST E(F) JUMP ABOVE INAS(110) CONDUCTION-BAND MINIMUM [J].