Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect

被引：28

作者：

Brown, G. F. ^{[1
,2
]}

Ager, J. W., III ^{[2
]}

Walukiewicz, W. ^{[2
]}

Schaff, W. J. ^{[3
]}

Wu, J. ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[2] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 26期

基金：

美国国家科学基金会;

关键词：

buffer layers; electrolytes; electron-hole recombination; Hall effect; III-V semiconductors; indium compounds; magnesium; multilayers; photoluminescence; radiative lifetimes; semiconductor thin films; surface conductivity; wide band gap semiconductors;

D O I：

10.1063/1.3062856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface contribution to the electrical transport properties of InN was directly measured and modulated by the electrolyte gated Hall effect. Undoped and Mg-doped films show different behaviors that can be effectively described by a multilayer model, taking into account the conduction contribution from both the surface and interface with the buffer layer. Gated photoluminescence experiments further show the surface accumulation layer enhances radiative electron-hole recombination in undoped InN.

引用

页数：3

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