Defect analysis of silicon detectors made of different materials for radiation hardness

被引：7

作者：

Dezillie, B

Eremin, V

Li, Z

机构：

[1] Brookhaven Natl Lab, Upton, NY 11973 USA

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 426卷 / 01期

关键词：

D O I：

10.1016/S0168-9002(98)01477-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A comparative study of the radiation hardness of single pad detectors, manufactured from standard float-zone (FZ) and epitaxial (Epi) n-type monocrystal silicon with comparable initial resistivity is presented. Detectors processed from FZ and Epi material with a low (400 Ohm cm and 500 Ohm cm) and a high (similar to 2 k Ohm cm) initial resistivity have been irradiated up to 4 x 10(14) n/cm(2) and measured under the same conditions in order to study the influence of the initial resistivity on the detector radiation hardness. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：114 / 119

页数：6

相关论文

共 14 条

[1] Study of electrical properties of high- and medium-resistivity silicon detectors irradiated with very high neutron fluence [J].

Biggeri, U ;

Borchi, E ;

Bruzzi, M ;

Li, Z ;

Verbitskaya, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 409 (1-3) :176-179

[2] Radiation hardness of silicon detectors manufactured on wafers from various sources [J].

Dezillie, B ;

Bates, S ;

Glaser, M ;

Lemeilleur, F ;

Leroy, C .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 388 (03) :314-317

[3] Experimental results on radiation induced bulk damage effects in float-zone and epitaxial silicon detectors [J].

Dezillie, B ;

Lemeilleur, F ;

Glaser, M ;

Casse, GL ;

Leroy, C .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 386 (01) :162-166

[4]

DEZILLIE B, 1998, BNL65637

[5]

DEZILLIE B, 1998, P 18 EUR S SEM DET N

[6]

DEZILLIE B, 1997, THESIS CERN

[7] Development of transient current and charge techniques for the measurement of effective net concentration of ionized charges (N-eff) in the space charge region of p-n junction detectors [J].

Eremin, V ;

Strokan, N ;

Verbitskaya, E ;

Li, Z .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 372 (03) :388-398

[8] INVESTIGATION ON THE LONG-TERM RADIATION HARDNESS OF LOW AND MEDIUM RESISTIVITY STARTING SILICON MATERIALS FOR RT SILICON DETECTORS IN HIGH-ENERGY PHYSICS [J].

LI, Z .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1995, 360 (1-2) :445-454

[9] First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x1014 n/cm2 [J].

Li, Z ;

Dezilllie, B ;

Eremin, V ;

Li, CJ ;

Verbitskaya, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 426 (01) :38-46

[10] Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors [J].

Li, Z ;

Eremin, V ;

Ilyashenko, I ;

Ivanov, A ;

Verbitskaya, E .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (03) :585-590