Detection and fitting of the soft breakdown failure mode in MOS structures

被引：21

作者：

Miranda, E ^{[1
]}

Suñé, J ^{[1
]}

Rodríguez, R ^{[1
]}

Nafría, M ^{[1
]}

Aymerich, X ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 8193, Spain

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 09期

关键词：

D O I：

10.1016/S0038-1101(99)00156-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Despite the numerous publications dealing with the soft breakdown (SBD) failure mode in ultrathin gate oxides, there is still a large disagreement on the actual functional form of the associated current-voltage (I-V) characteristic. Here, we show that a power law, for applied voltages less than approximately 3.5 V, and an exponential law for higher voltages form suitable fitting models. The discrepancy has its origin in the fact that the SBD experimental detection window is variable, since it is determined not only by the geometrical parameters of the device under test, which set the fresh I-V characteristic of the sample, but also by the strength of the breakdown event. In addition, we analyze the scatter of the SBD I-V curves as a function of the stress current. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1801 / 1805

页数：5

共 19 条

[11] Soft breakdown in ultrathin SiO2 layers:: The conduction problem from a new point of view
Miranda, E
Suñé, J
Rodríguez, R
Nafría, M
Martín, F
Aymerich, X
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (4B): : 2223 - 2226
[12] Switching behavior of the soft breakdown conduction characteristic in ultrathin (<5 nm) oxide MOS capacitors
Miranda, E
Sune, J
Rodriguez, R
Nafria, M
Aymerich, X
[J]. 1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, : 42 - 46
[13] Prospects for low-power, high-speed MPUs using 1.5 nm direct-tunneling gate oxide MOSFETs
Momose, HS
Ono, M
Yoshitomi, T
Ohguro, T
Nakamura, SI
Saito, M
Iwai, H
[J]. SOLID-STATE ELECTRONICS, 1997, 41 (05) : 707 - 714
[14] Mott NF., 1971, Electronic Processes in Non-crystalline Materials
[15] NIGAM T, 1998, UNPUB 29 SEM INT SPE
[16] Extended time dependent dielectric breakdown model based on anomalous gate area dependence of lifetime in ultra thin silicon dioxides
Okada, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B): : 1443 - 1447
[17] Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides
Okada, K
Taniguchi, K
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (03) : 351 - 353
[18] A new soft breakdown model for thin thermal SiO2 films under constant current stress
Tomita, T
Utsunomiya, H
Sakura, T
Kamakura, Y
Taniguchi, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (01) : 159 - 164
[19] YOSHIDA T, 1996, C SOL STAT DEV MAT Y, P539

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