Annealing effect on properties of transparent and conducting ZnO thin films

被引：53

作者：

Bouderbala, M. ^{[1
]}

Hamzaoui, S. ^{[1
]}

Adnane, M. ^{[1
]}

Sahraoui, T. ^{[1
]}

Zerdali, M. ^{[1
]}

机构：

[1] USTO, Dept Phys, Lab Microscopie Elect & Sci Mat, El Mnaouer 31000, Oran, Algeria

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 05期

关键词：

Annealing; Electrical properties; Optical properties; Structural properties; Zinc oxide; Sputtering deposition; SPUTTERED ZINC-OXIDE; WAVE TRANSDUCERS; SOLAR-CELLS; DEPOSITION; BEHAVIOR;

D O I：

10.1016/j.tsf.2008.09.089

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work presents the effect of postdeposition annealing on the structural, electrical and optical properties of undoped ZnO (zinc oxide) thin films, prepared by radio-frequency sputtering method. Two samples, 0.17 and 0.32 mu m-thick, were annealed in vacuum from room temperature to 350 degrees C while another 0.32 mu m-thick sample was annealed in air at 300 degrees C for 1 h. X-ray diffraction analysis revealed that all the films had a c-axis orientation of the wurtzite structure normal to the substrate. Electrical measurements showed that the resistivity of samples annealed in vacuum decreased gradually with the increase of annealing temperature. For the 0.32 mu m-thick sample, the gradual decrease of the resistivity was essentially due to a gradual increase in the mobility. On the other hand, the resistivity of the sample annealed in air increased strongly. The average transmission within the visible wavelength region for all films was higher than 80%. The band gap of samples annealed in vacuum increased whereas the band gap of the one annealed in air decreased. The main changes observed in all samples of this study were explained in terms of the effect of oxygen chemisorption and microstructural properties. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1572 / 1576

页数：5

共 19 条

[1] Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique [J].

Al Asmar, R ;

Juillaguet, S ;

Ramonda, M ;

Giani, A ;

Combette, P ;

Khoury, A ;

Foucaran, A .

JOURNAL OF CRYSTAL GROWTH, 2005, 275 (3-4) :512-520

[2] Effects of the position substrate upon the structural behaviour, electrical and optical properties of zinc-oxide films used in solar cells [J].

Bouderbala, M ;

Hamzaoui, S ;

Stambouli, AB ;

Bouziane, H .

APPLIED ENERGY, 1999, 64 (1-4) :89-96

[3] TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].

CHOPRA, KL ;

MAJOR, S ;

PANDYA, DK .

THIN SOLID FILMS, 1983, 102 (01) :1-46

[4] Optical and photoelectrical properties of ZnO thin films and the effects of annealing [J].

Henseler, MJH ;

Lee, WCT ;

Miller, P ;

Durbin, SM ;

Reeves, RJ .

JOURNAL OF CRYSTAL GROWTH, 2006, 287 (01) :48-53

[5] ZINC-OXIDE THIN-FILM SURFACE-WAVE TRANSDUCERS [J].

HICKERNELL, FS .

PROCEEDINGS OF THE IEEE, 1976, 64 (05) :631-635

[6] Dependence of electrical and structural properties on film thickness of undoped ZnO thin films prepared by plasma-assisted electron beam deposition [J].

Kishimoto, S ;

Yamamoto, T ;

Nakagawa, Y ;

Ikeda, K ;

Makino, H ;

Yamada, T .

SUPERLATTICES AND MICROSTRUCTURES, 2006, 39 (1-4) :306-313

[7] Modified Thornton model for magnetron sputtered zinc oxide:: film structure and etching behaviour [J].

Kluth, O ;

Schöpe, G ;

Hüpkes, J ;

Agashe, C ;

Müller, J ;

Rech, B .

THIN SOLID FILMS, 2003, 442 (1-2) :80-85

[8] RF SPUTTERING OF ZNO SHEAR-WAVE TRANSDUCERS [J].

LEHMANN, HW ;

WIDMER, R .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :3868-3879

[9] Room temperature dc and ac electrical behaviour of undoped ZnO films under UV light [J].

Martins, R ;

Igreja, R ;

Ferreira, I ;

Marques, A ;

Pimentel, A ;

Gonçalves, A ;

Fortunato, E .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 118 (1-3) :135-140

[10] HIGHLY CONDUCTIVE AND TRANSPARENT ALUMINUM DOPED ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING [J].

MINAMI, T ;

NANTO, H ;

TAKATA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (05) :L280-L282

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