Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots

被引：61

作者：

Liao, XZ ^{[1
]}

Zou, J

Cockayne, DJH

Wan, J

Jiang, ZM

Jin, G

Wang, KL

机构：

[1] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

[2] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

[3] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[4] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

[5] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.65.153306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ge(Si)/Si(001) quantum dots produced by gas-source molecular beam epitaxy at 575 degreesC were investigated using energy-filtering transmission electron microscopy and x-ray energy dispersive spectrometry. Results show a nonuniform composition distribution in the quantum dots with the highest Ge content at the dot center. The average Ge content in the quantum dots is much higher than in the wetting layer. The quantum dot/substrate interface has been moved to the substrate side. A growth mechanism of the quantum dots is discussed based on the composition distribution and interfacial structures.

引用

页码：1 / 4

页数：4

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