Light-controllable room temperature negative differential resistance in deep-trench type nitride-oxide tunneling device and its applications

被引:3
作者
Chen, F [1 ]
Li, B [1 ]
Feng, KD [1 ]
机构
[1] IBM Corp, Microelect, Essex Jct, VT 05452 USA
关键词
D O I
10.1063/1.1476959
中图分类号
O59 [应用物理学];
学科分类号
摘要
This study presents the room-temperature operation of deep-trench type nitride-oxide metal-insulator-semiconductor three-terminal tunneling devices which were fabricated by a standard metal-oxide-semiconductor process. It is instructive to observe a photoinduced N-type negative differential resistance (NDR) with a high peak-to-valley current ratio for device operated under negative polysilicon node bias under tungsten lamp illumination. An explanation was provided for the NDR phenomenon with proper three-terminal biasing. The sudden current drop under light illumination was caused by the sudden reduction of the two-carrier conduction due to Esaki band-to-band tunneling. The NDR amplitude could be modulated by light intensity. The position of the NDR current peak was tunable at different voltages with different p-well biases. The optoelectronic response of nitride-oxide devices we investigate here may open an application window for the nitride-oxide system in silicon-based optoelectronic integrated circuits, wireless communications, and future quantum devices. (C) 2002 American Institute of Physics.
引用
收藏
页码:3271 / 3273
页数:3
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