Photo-enhanced negative differential resistance and photo-accelerated time-dependent dielectric breakdown in thin nitride-oxide dielectric film

被引：4

作者：

Chen, F ^{[1
]}

Li, BZ ^{[1
]}

Jammy, R ^{[1
]}

Dufresne, RA ^{[1
]}

Strong, AW ^{[1
]}

机构：

[1] IBM Corp, Microelect, Essex Junction, VT 05452 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 21期

关键词：

D O I：

10.1063/1.1373409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photo-enhanced negative differential resistance (NDR) and photo-accelerated time-dependent dielectric breakdown (TDDB) were observed in thin nitride-oxide (N-O) dielectric film biased with gate negative under tungsten lamp illumination. The photo-induced leakage current and photo-accelerated TDDB show dramatic asymmetry under negative and positive gate bias with constant photo-illumination. Our experiments suggest a unique current conduction mechanism in this nitride thin film. A two-carrier conduction induced positive feedback transport process under negative gate bias, and a two-carrier conduction induced self-limiting transport process under positive gate bias are proposed to qualitatively explain the experimental data. The nitride thin film device possessing a light-enhanced NDR can be employed to develop Si-based optoelectronic devices such as switching and logic control. (C) 2001 American Institute of Physics.

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页码：3241 / 3243

页数：3

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