Heterostructure optoelectronic switch with light controllable S-shaped negative differential resistance

被引：3

作者：

Guo, DF ^{[1
]}

机构：

[1] Chinese AF Acad, Dept Elect Engn, Kaohsiung, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 09期

关键词：

D O I：

10.1063/1.120949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A heterostructure optoelectronic switch, grown by molecular beam epitaxy, has been fabricated. Owing to the carrier confinement and avalanche multiplication in the transport mechanism, S-shaped negative-differential-resistance performances are observed in the current-voltage (I-V) characteristics. The device shows a flexible optical function related to the potential barrier height and breakdown voltage controllable by incident light. The dependence of the I-V characteristics on illumination is attributed to the carrier confinement effect in the device operation. (C) 1998 American Institute of Physics.

引用

页码：1010 / 1012

页数：3

共 10 条

[1] An exclusive-OR logic circuit based on controlled quenching of series-connected negative differential resistance devices
Chen, KJ
Waho, T
Maezawa, K
Yamamoto, M
[J]. IEEE ELECTRON DEVICE LETTERS, 1996, 17 (06) : 309 - 311
[2] GAAS/INGAAS/ALGAAS OPTOELECTRONIC SWITCH IN AVALANCHE HETEROJUNCTION PHOTOTRANSISTOR VERTICALLY INTEGRATED WITH A RESONANT-CAVITY
HUANG, FY
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (04) : 405 - 407
[3] EFFECT OF PROTON ISOLATION ON DC AND RF PERFORMANCE OF GAAS PLANAR-DOPED BARRIER DIODES
HUTCHINSON, S
CARR, M
GWILLIAM, R
KELLY, MJ
SEALY, BJ
[J]. ELECTRONICS LETTERS, 1995, 31 (07) : 583 - 585
[4] MULTISTABILITY OF THE CURRENT-VOLTAGE CHARACTERISTICS IN DOPED GAAS-ALAS SUPERLATTICES
KASTRUP, J
GRAHN, HT
PLOOG, K
PRENGEL, F
WACKER, A
SCHOLL, E
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (14) : 1808 - 1810
[5] GAAS PLANAR DOPED BARRIER DIODES FOR MILLIMETER-WAVE DETECTOR APPLICATIONS
KEARNEY, MJ
CONDIE, A
DALE, I
[J]. ELECTRONICS LETTERS, 1991, 27 (09) : 721 - 722
[6] HIGH-SENSITIVITY AND HIGH-GAIN OPTICAL FUNCTIONAL DEVICE - TRIANGULAR-BARRIER OPTOELECTRONIC SWITCH (TOPS)
SAKATA, H
UTAKA, K
MATSUSHIMA, Y
[J]. ELECTRONICS LETTERS, 1994, 30 (21) : 1792 - 1793
[7] An exclusive-nor based on resonant interband tunneling FET's
Shen, J
Tehrani, S
Goronkin, H
Kramer, G
Tsui, R
[J]. IEEE ELECTRON DEVICE LETTERS, 1996, 17 (03) : 94 - 96
[8] SZE SM, 1981, PHYSICS SEMICONDUCTO
[9] A NEW DOUBLE HETEROSTRUCTURE OPTOELECTRONIC SWITCHING DEVICE USING MOLECULAR-BEAM EPITAXY
TAYLOR, GW
SIMMONS, JG
CHO, AY
MAND, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 596 - 600
[10] OPTICALLY INDUCED SWITCHING IN A P-CHANNEL DOUBLE HETEROSTRUCTURE OPTOELECTRONIC SWITCH
TAYLOR, GW
MAND, RS
SIMMONS, JG
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1406 - 1408

← 1 →