Local vibrational modes as a probe of activation process in p-type GaN

被引:55
作者
Harima, H
Inoue, T
Nakashima, S
Ishida, M
Taneya, M
机构
[1] Osaka Univ, Dept Appl Phys, Osaka 5650871, Japan
[2] Sharp Corp, Adv Technol Res Labs, Nara 6328567, Japan
关键词
D O I
10.1063/1.124701
中图分类号
O59 [应用物理学];
学科分类号
摘要
Raman spectra for a series of Mg-doped GaN films grown by metal organic chemical vapor deposition and annealed in N-2 ambiance at different temperatures have been investigated. Some local vibrational modes related to hydrogen were observed, showing drastic changes with the annealing temperature. The spectra show clearly that H impurities incorporated in as-grown films, which passivate Mg acceptors, are released from the Mg-N bonding at above similar to 600 degrees C, and diffuse in the film to form new chemical bondings. We have also observed a local mode related to activated Mg acceptors. This mode is conveniently used as a probe of the activation process of Mg acceptors. (C) 1999 American Institute of Physics. [S0003-6951(99)02436-5].
引用
收藏
页码:1383 / 1385
页数:3
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