Local vibrational modes as a probe of activation process in p-type GaN

被引：55

作者：

Harima, H

Inoue, T

Nakashima, S

Ishida, M

Taneya, M

机构：

[1] Osaka Univ, Dept Appl Phys, Osaka 5650871, Japan

[2] Sharp Corp, Adv Technol Res Labs, Nara 6328567, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.124701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman spectra for a series of Mg-doped GaN films grown by metal organic chemical vapor deposition and annealed in N-2 ambiance at different temperatures have been investigated. Some local vibrational modes related to hydrogen were observed, showing drastic changes with the annealing temperature. The spectra show clearly that H impurities incorporated in as-grown films, which passivate Mg acceptors, are released from the Mg-N bonding at above similar to 600 degrees C, and diffuse in the film to form new chemical bondings. We have also observed a local mode related to activated Mg acceptors. This mode is conveniently used as a probe of the activation process of Mg acceptors. (C) 1999 American Institute of Physics. [S0003-6951(99)02436-5].

引用

页码：1383 / 1385

页数：3

共 17 条

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