The role of molybdenum oxide as anode interfacial modification in the improvement of efficiency and stability in organic light-emitting diodes

被引：151

作者：

Wang, Fengxia ^{[1
]}

Qiao, Xianfeng ^{[1
]}

Xiong, Tao ^{[1
]}

Ma, Dongge ^{[1
]}

机构：

[1] Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 06期

关键词：

Morphology; Electronic property; MoO3; Organic light-emitting diodes;

D O I：

10.1016/j.orgel.2008.07.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It has been experimentally found that molybdenum oxide (MoO3) as the interfacial modification layer on indium-tin-oxide (ITO) in organic light-emitting diodes (OLEDs) significantly improves the efficiency and lifetime. In this paper, the role of MoO3 and MoO3 doped N,N '-di(naphthalene-1-yl)-N,N '-diphenyl-benzidine (NPB) as the interface modification layer on ITO in improvement of the efficiency and stability of OLEDs is investigated in detail by atomic force microscopy (AFM), polarized optical microscopy, transmission spectra, ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The studies on the energy level and the morphology of the films treated at different temperatures clearly show that the MoO3 and MoO3:NPB on ITO can reduce the hole injection barrier, improve the interfacial stability and suppress the crystallization of hole-transporting NPB, leading to a higher efficiency and longer lifetime of OLEDs. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：985 / 993

页数：9

共 40 条

[21] Optimized hole injection with strong electron acceptors at organic-metal interfaces [J].