Experimental Evidence for Epitaxial Silicene on Diboride Thin Films

被引：1416

作者：

Fleurence, Antoine ^{[1
]}

Friedlein, Rainer ^{[1
]}

Ozaki, Taisuke ^{[1
,2
]}

Kawai, Hiroyuki ^{[1
]}

Wang, Ying ^{[1
]}

Yamada-Takamura, Yukiko ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

[2] Japan Adv Inst Sci & Technol, Res Ctr Simulat Sci, Nomi, Ishikawa 9231292, Japan

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 108卷 / 24期

基金：

日本学术振兴会;

关键词：

PHOTOELECTRON DIFFRACTION; ER SILICIDE; SURFACE; SI(111); SI;

D O I：

10.1103/PhysRevLett.108.245501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

As the Si counterpart of graphene, silicene may be defined as an at least partially sp(2)-hybridized, atom-thick honeycomb layer of Si that possesses pi-electronic bands. Here we show that two-dimensional, epitaxial silicene forms through surface segregation on zirconium diboride thin films grown on Si wafers. A particular buckling of silicene induced by the epitaxial relationship with the diboride surface leads to a direct pi-electronic band gap at the Gamma point. These results demonstrate that the buckling and thus the electronic properties of silicene are modified by epitaxial strain.

引用

页数：5

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