Ultrathin silicon dioxide formation by ozone on ultraflat Si surface

被引：9

作者：

Kurokawa, A ^{[1
]}

Maeda, T ^{[1
]}

Sakamoto, K ^{[1
]}

Itoh, H ^{[1
]}

Nakamura, K ^{[1
]}

Koike, K ^{[1
]}

Moon, DW ^{[1
]}

Ha, YH ^{[1
]}

Ichimura, S ^{[1
]}

Ando, A ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS | 1999年 / 567卷

关键词：

D O I：

10.1557/PROC-567-21

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350 degrees C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone-oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350 degrees C is the same as that of an oxide grown thermally at 750 degrees C.

引用

页码：21 / 26

页数：6

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