Short-wavelength (0.7 μm<λ<0.78 μm) high-power InGaAsP-active diode lasers

Short-wavelength Al-free active-region compressively strained (Delta a/a=1.6%) InGaAsP single-quantum-well diode lasers have been optimized for high continuous-wave (CW) output powers. The use of a highly misoriented substrate is shown to improve the low-temperature spectral characteristics of the quantum well active and result in higher laser performance, By employing strain compensated active regions and growth on highly misoriented Substrates, record-high characteristic temperature coefficients T-0 (115-125 K) and T-1 (400-500 K) are achieved for this wavelength region (lambda = 0.73 mu m). A broad waveguide laser design with In-0.5(Ga0.5Al0.5)(0.5)P cladding layers is utilized to achieve CW output powers of 3.2 W (100-mu m wide, L = 1 mm), with stable operation demonstrated at 0.5-W CW.