TM-polarized laser emission is demonstrated at wavelengths longer than 650 nm, for (AlGa)0.5In0.5P-based laser diodes. These structures contain tensile-strained AlGaAsP or InGaAsP quantum well active regions, which are capable of spanning a wavelength range of roughly 650-850 nm, for TM-mode lasers on GaAs substrates. This represents an extension of the wavelength range available from typical GaInP-(AlGa)0.5In0.5P lasers, where the requirement for biaxial tension limits the TM-mode wavelengths to less than 650 nm. In addition, compared to AlGaAs confining structures, the high-bandgap (AlGa)0.5In0.5P confinement structure used here makes AlGaAs(P) active regions feasible at shorter wavelengths, with good performance maintained for 670< lambda <700 nm. Likewise, the wavelength range 700< lambda <750 nm, where AlGaAs laser characteristics are diminished, becomes accessible using these materials.