TENSILE-STRAINED ALGAASP- AND INGAASP-(ALGA)0.5IN0.5P QUANTUM-WELL LASER-DIODES FOR TM-MODE EMISSION IN THE WAVELENGTH RANGE 650-LESS-THAN-LAMBDA-LESS-THAN-850-NM

被引:25
作者
BOUR, DP
TREAT, DW
BEERNINK, KJ
THORNTON, RL
PAOLI, TL
BRINGANS, RD
机构
[1] Electronic Materials Laboratory, Xerox Palo Alto Research Center, Palo Alto, CA
关键词
D O I
10.1109/68.334814
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
TM-polarized laser emission is demonstrated at wavelengths longer than 650 nm, for (AlGa)0.5In0.5P-based laser diodes. These structures contain tensile-strained AlGaAsP or InGaAsP quantum well active regions, which are capable of spanning a wavelength range of roughly 650-850 nm, for TM-mode lasers on GaAs substrates. This represents an extension of the wavelength range available from typical GaInP-(AlGa)0.5In0.5P lasers, where the requirement for biaxial tension limits the TM-mode wavelengths to less than 650 nm. In addition, compared to AlGaAs confining structures, the high-bandgap (AlGa)0.5In0.5P confinement structure used here makes AlGaAs(P) active regions feasible at shorter wavelengths, with good performance maintained for 670< lambda <700 nm. Likewise, the wavelength range 700< lambda <750 nm, where AlGaAs laser characteristics are diminished, becomes accessible using these materials.
引用
收藏
页码:1283 / 1285
页数:3
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