High-power InAlGaAs-GaAs laser diode emitting near 731 nm

被引：21

作者：

Emanuel, MA ^{[1
]}

Skidmore, JA ^{[1
]}

Jansen, M ^{[1
]}

Nabiev, R ^{[1
]}

机构：

[1] COHERENT LASER GRP,SANTA CLARA,CA 95054

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 11期

关键词：

laser biomedical applications; quantum-well lasers; semiconductor laser arrays; semiconductor lasers;

D O I：

10.1109/68.634705

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power, reliable operation of an ZnAlGaAs-based laser diode structure emitting near 731 mm and having a strained InAlGaAs active region is described. Threshold currents for coated 100 mu m x 1000 mu m devices are 281 mA, and a peak power conversion efficiency of 41% is measured, Internal losses are measured to be 1.2 cm(-1). A system for fiber-coupling two-dimensional continuous-wave (CW) arrays of these devices is demonstrated.

引用

收藏

页码：1451 / 1453

页数：3

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