HIGH-POWER, HIGH-TEMPERATURE OPERATION OF ALINGAAS-ALGAAS STRAINED SINGLE-QUANTUM-WELL DIODE-LASERS

被引：17

作者：

CHOI, HK

WANG, CA

KOLESAR, DF

AGGARWAL, RL

WALPOLE, JN

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 10期

关键词：

D O I：

10.1109/68.93240

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained-layer AlIGaAs-AlGaAs graded-index separate-confinement heterostructure single-quantum-well diode lasers with cavity width and length of 500 and 1000-mu-m, respectively, have been operated CW at heatsink temperatures up to 125-degrees-C, with output power up to 4.9 W per facet and power efficiency as high as 49% measured at 10-degrees-C. Promising results have been obtained in initial reliability tests on uncoated devices at heatsink temperatures of 10 and 50-degrees-C.

引用

收藏

页码：857 / 859

页数：3

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