HIGH-POWER, HIGH-TEMPERATURE OPERATION OF ALINGAAS-ALGAAS STRAINED SINGLE-QUANTUM-WELL DIODE-LASERS

被引:17
作者
CHOI, HK
WANG, CA
KOLESAR, DF
AGGARWAL, RL
WALPOLE, JN
机构
[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA
关键词
D O I
10.1109/68.93240
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Strained-layer AlIGaAs-AlGaAs graded-index separate-confinement heterostructure single-quantum-well diode lasers with cavity width and length of 500 and 1000-mu-m, respectively, have been operated CW at heatsink temperatures up to 125-degrees-C, with output power up to 4.9 W per facet and power efficiency as high as 49% measured at 10-degrees-C. Promising results have been obtained in initial reliability tests on uncoated devices at heatsink temperatures of 10 and 50-degrees-C.
引用
收藏
页码:857 / 859
页数:3
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