ALINGAAS/ALGAAS SEPARATE-CONFINEMENT HETEROSTRUCTURE STRAINED SINGLE QUANTUM-WELL DIODE-LASERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

Separate-confinement heterostructure diode lasers containing a strained Al0.18In0.20Ga0.62 As single quantum well active layer and Al0.25Ga0.75As confining layers have been fabricated from structures grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy. The emission wavelength of these devices is 814 nm. Threshold current density is as low as 103 A cm-2 for cavity length L = 1500-mu-m, and differential quantum efficiency as high as 90% for L = 280-mu-m. The characteristic temperature T0 is 214 K between 10 and 40-degrees-C, and 159 K between 40 and 80-degrees-C. Preliminary tests of cw operation suggest that these lasers are more reliable than AlGaAs/AlGaAs lasers.