High-power InAlGaAs-GaAs laser diode emitting near 731 nm

被引：21

作者：

Emanuel, MA ^{[1
]}

Skidmore, JA ^{[1
]}

Jansen, M ^{[1
]}

Nabiev, R ^{[1
]}

机构：

[1] COHERENT LASER GRP,SANTA CLARA,CA 95054

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 11期

关键词：

laser biomedical applications; quantum-well lasers; semiconductor laser arrays; semiconductor lasers;

D O I：

10.1109/68.634705

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power, reliable operation of an ZnAlGaAs-based laser diode structure emitting near 731 mm and having a strained InAlGaAs active region is described. Threshold currents for coated 100 mu m x 1000 mu m devices are 281 mA, and a peak power conversion efficiency of 41% is measured, Internal losses are measured to be 1.2 cm(-1). A system for fiber-coupling two-dimensional continuous-wave (CW) arrays of these devices is demonstrated.

引用

收藏

页码：1451 / 1453

页数：3

相关论文

共 20 条

[11]

MCILROY PWA, 1985, IEEE J QUANTUM ELECT, V21, P1958, DOI 10.1109/JQE.1985.1072606

[12] ROOM-TEMPERATURE OPERATION OF 650 NM ALGAAS MULTI-QUANTUM-WELL LASER DIODE GROWN BY MOLECULAR-BEAM EPITAXY [J].

SAKU, T ;

IWAMURA, H ;

HIRAYAMA, Y ;

SUZUKI, Y ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (02) :L73-L75

[13]

SHEALY JR, 1987, APPL PHYS LETT, V52, P1455

[14] HIGH-POWER OPERATION OF BROAD-AREA LASER-DIODES WITH GAAS AND ALGAAS SINGLE QUANTUM-WELLS FOR ND-YAG LASER PUMPING [J].

SHIGIHARA, K ;

NAGAI, Y ;

KARAKIDA, S ;

TAKAMI, A ;

KOKUBO, Y ;

MATSUBARA, H ;

KAKIMOTO, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1537-1543

[15] SHORT WAVELENGTH (699 NM) ELECTRICALLY PUMPED VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

TELL, B ;

LEIBENGUTH, RE ;

BROWNGOEBELER, KF ;

LIVESCU, G .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (11) :1195-1196

[16] HIGH-POWER ALGAAS-GAAS VISIBLE DIODE-LASERS [J].

TIHANYI, PL ;

JAIN, FC ;

ROBINSON, MJ ;

DIXON, JE ;

WILLIAMS, JE ;

MEEHAN, K ;

ONEILL, MS ;

HEATH, LS ;

BEYEA, DM .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (07) :775-777

[17] EFFICIENCY ENHANCEMENT IN QUANTUM WELL LASERS VIA TAILORED DOPING PROFILES [J].

WATERS, RG ;

HILL, DS ;

YELLEN, SL .

APPLIED PHYSICS LETTERS, 1988, 52 (24) :2017-2018

[18] SHORT WAVELENGTH (VISIBLE) GAAS QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

WOODBRIDGE, K ;

BLOOD, P ;

FLETCHER, ED ;

HULYER, PJ .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :16-18

[19] RELIABILITY OF GAAS-BASED SEMICONDUCTOR DIODE-LASERS - 0.6-1.1-MU-M [J].

YELLEN, SL ;

SHEPARD, AH ;

DALBY, RJ ;

BAUMANN, JA ;

SERREZE, HB ;

GUIDO, TS ;

SOLTZ, R ;

BYSTROM, KJ ;

HARDING, CM ;

WATERS, RG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :2058-2067

[20] ANOMALOUS TEMPERATURE-DEPENDENCE OF THRESHOLD FOR THIN QUANTUM-WELL ALGAAS DIODE-LASERS [J].

ZORY, PS ;

REISINGER, AR ;

WATERS, RG ;

MAWST, LJ ;

ZMUDZINSKI, CA ;

EMANUEL, MA ;

GIVENS, ME ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1986, 49 (01) :16-18