Coulomb oscillations in three-layer graphene nanostructures

被引:22
作者
Guettinger, J. [1 ]
Stampfer, C. [1 ]
Molitor, F. [1 ]
Graf, D. [1 ]
Ihn, T. [1 ]
Ensslin, K. [1 ]
机构
[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
来源
NEW JOURNAL OF PHYSICS | 2008年 / 10卷
基金
瑞士国家科学基金会;
关键词
D O I
10.1088/1367-2630/10/12/125029
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain contacts. Three lateral graphene gates are used to electrostatically tune the device. An individual three-layer graphene constriction has been investigated separately showing a transport gap near the charge neutrality point. The graphene tunneling barriers show a strongly nonmonotonic coupling as a function of gate voltage indicating the presence of localized states in the constrictions. We show Coulomb oscillations and Coulomb diamond measurements proving the functionality of the graphene SET. A charging energy of approximate to 0.6 meV is extracted.
引用
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页数:10
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