Effects of induction heating on temperature distribution and growth rate in large-size SiC growth system

被引：33

作者：

Chen, QS ^{[1
]}

Gao, P ^{[1
]}

Hu, WR ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 266卷 / 1-3期

关键词：

computer simulation; growth models; growth from vapor; single crystal growth; physical vapor deposition processes; semiconducting silicon compounds;

D O I：

10.1016/j.jcrysgro.2004.02.061

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

For design of large-size silicon carbide (SiC) growth system, it is essential to choose induction heating parameters such as frequency and power. Modeling and simulations have been performed on a 2-in SiC growth system to investigate the effects of induction heating on the temperature distribution and growth rate. For frequencies in the range of 4-20 kHz, it is found that the maximum temperature and growth temperature in the growth system increase with the frequency while keeping the same current in the induction coil. For lower frequency induction heating, it is difficult to achieve high temperatures, which may be essential for the growth of high-quality crystals. It is observed from experiments that the quality of SiC crystals is related to the growth temperature. The SiC growth rates as a function of system pressure for different frequencies have been obtained by the theoretical method. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：320 / 326

页数：7

共 14 条

[1] Role of temperature gradient in bulk crystal growth of SiC [J].

Balkas, CM ;

Maltsev, AA ;

Roth, MD ;

Yushin, NK .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :79-82

[2] Heat transfer and kinetics of bulk growth of silicon carbide [J].

Chen, QS ;

Zhang, H ;

Prasad, V .

JOURNAL OF CRYSTAL GROWTH, 2001, 230 (1-2) :239-246

[3] Modeling of heat transfer and kinetics of physical vapor transport growth of silicon carbide crystals [J].

Chen, QS ;

Zhang, H ;

Prasad, V ;

Balkas, CM ;

Yushin, NK .

JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 2001, 123 (06) :1098-1109

[4] Kinetics and modeling of sublimation growth of silicon carbide bulk crystal [J].

Chen, QS ;

Zhang, H ;

Prasad, V ;

Balkas, CM ;

Yushin, NK ;

Wang, S .

JOURNAL OF CRYSTAL GROWTH, 2001, 224 (1-2) :101-110

[5] Modeling analysis of temperature field and species transport inside the system for sublimation growth of SiC in tantalum container [J].

Egorov, YE ;

Galyukov, AO ;

Gurevich, SG ;

Makarov, YN ;

Mokhov, EN ;

Ramm, MG ;

Ramm, MS ;

Roenkov, AD ;

Segal, AS ;

Vodakov, YA ;

Vorob'ev, AN ;

Zhmakin, AI .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :61-64

[6] Sublimation growth of silicon carbide bulk crystals:: experimental and theoretical studies on defect formation and growth rate augmentation [J].

Hofmann, D ;

Bickermann, M ;

Eckstein, R ;

Kölbl, M ;

Müller, SG ;

Schmitt, E ;

Weber, A ;

Winnacker, A .

JOURNAL OF CRYSTAL GROWTH, 1999, 198 :1005-1010

[7] Analysis of sublimation growth of bulk SiC crystals in tantalum container [J].

Karpov, SY ;

Kulik, AV ;

Zhmakin, IA ;

Makarov, YN ;

Mokhov, EN ;

Ramm, MG ;

Ramm, MS ;

Roenkov, AD ;

Vodakov, YA .

JOURNAL OF CRYSTAL GROWTH, 2000, 211 (1-4) :347-351

[8] STUDY OF THE EQUILIBRIUM PROCESSES IN THE GAS-PHASE DURING SILICON-CARBIDE SUBLIMATION [J].

LILOV, SK .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 21 (01) :65-69

[9] Integrated process modeling and experimental validation of silicon carbide sublimation growth [J].

Ma, RH ;

Zhang, H ;

Ha, S ;

Skowronski, M .

JOURNAL OF CRYSTAL GROWTH, 2003, 252 (04) :523-537

[10] The status of SiC bulk growth from an industrial point of view [J].

Müller, SG ;

Glass, RC ;

Hobgood, HM ;

Tsvetkov, VF ;

Brady, M ;

Henshall, D ;

Jenny, JR ;

Malta, D ;

Carter, CH .

JOURNAL OF CRYSTAL GROWTH, 2000, 211 (1-4) :325-332

← 1 2 →