Role of temperature gradient in bulk crystal growth of SiC

被引：14

作者：

Balkas, CM ^{[1
]}

Maltsev, AA ^{[1
]}

Roth, MD ^{[1
]}

Yushin, NK ^{[1
]}

机构：

[1] Sterling Semicond Inc, Sterling, VA 20166 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

activation energy; bulk crystal growth; enlargement; growth rate; mass-transport; sublimation; temperature distribution; X-ray;

D O I：

10.4028/www.scientific.net/MSF.338-342.79

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of axial and radial components of temperature gradient on the silicon carbide (SiC) bulk crystal growth were investigated. It was shown that the growth rate is a linear function of an axial temperature gradient in the growth chamber. In addition preliminary information relating radial temperature gradient to boule diameter enlargement is also presented. The grown crystals were analyzed by optical microscopy and X-ray diffraction.

引用

页码：79 / 82

页数：4

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