Low-voltage high-performance C60 thin film transistors via low-surface-energy phosphonic acid monolayer/hafnium oxide hybrid dielectric

被引：26

作者：

Acton, Orb ^{[1
]}

Ting, Guy ^{[2
]}

Ma, Hong ^{[1
,3
]}

Jen, Alex K. -Y. ^{[1
,2
,3
]}

机构：

[1] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

[2] Univ Washington, Dept Chem, Seattle, WA 98195 USA

[3] Univ Washington, Inst Adv Mat & Technol, Seattle, WA 98195 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2975175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

C(60)-based organic thin film transistors (OTFTs) have been fabricated using a n-octadecylphosphonic acid self-assembled monolayer/ sol-gel processed hafnium oxide hybrid dielectric. With the combination of high capacitance (580 nF/cm(2)) and low leakage current density (8 x 10(-9) A/cm(2)), this hybrid dielectric yields C(60) OTFTs operating under 1.5 V with an average n-channel saturation field-effect mobility of 0.28 cm(2)/V s, high on-off current ratio of 105, and low subthreshold slope of 100 mV/decade. The low surface energy of the n-octadecylphosphonic acid allows C(60) to form a thin film with large grains that provide an efficient charge carrier pathway for the low-voltage OTFTs. (c) 2008 American Institute of Physics.

引用

页数：3

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