The effect of growth condition on the structure of 2H-AIN films deposited on Si(111) by plasma-assisted molecular beam epitaxy

被引：24

作者：

Kaiser, U

Brown, PD

Khodos, I

Humphreys, CJ

Schenk, HPD

Richter, W

机构：

[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[3] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Russia

来源：

JOURNAL OF MATERIALS RESEARCH | 1999年 / 14卷 / 05期

关键词：

D O I：

10.1557/JMR.1999.0275

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of substrate cleaning, nitridation time, and substrate temperature in the range 800-1000 degrees C on the microstructure of A1N/Si(111) films grown by simultaneous plasma-assisted molecular beam epitaxy have been investigated. It has been demonstrated, using a combination of conventional and high-resolution transmission electron microscopy, that the interface structure, the film defect structure, and the film surface roughness are strongly related, The formation of single crystal 2H-A1N films with atomically flat surfaces occurs at 800 degrees C for conditions of 2.5 nm/min growth rate on very pure, atomically flat Si substrates.

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页码：2036 / 2042

页数：7

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