GROWTH OF EPITAXIAL ALN(0001) ON SI(111) BY REACTIVE MAGNETRON SPUTTER-DEPOSITION

2H-AlN(0001) layers have been grown on Si(lll) by reactive magnetron sputtering from an Al target in Ar+N-2 gas mixtures at temperatures T-s=400-900 degrees C. Variations in reactive gas consumption, target voltage, and current-voltage characteristics versus nitrogen partial pressure were used to determine deposition parameters required to yield stoichiometric AIN with growth rates greater than or equal to 2 mu m h(-1). High-resolution cross-sectional transmission electron microscopy (XTEM) analyses of films grown at 900 degrees C showed that the initial 6-8 monolayers were (111)-oriented cubic 3C before transforming to the (0001)-oriented 2H polytype. The epitaxial relationship was found by XTEM and x-ray diffraction (XRD) to be 2H-AlN(0001)\\3C-AlN(111)\\Si(lll) with 2H-AlN[1 ($) over bar 210]\\3C-AlN[110]\\Si[110]. High-resolution XRD omega-2 theta and omega rocking curve widths for films grown at T-s=900 degrees C were 70 and 500 are sec, respectively, the lowest values yet reported. (C) 1995 American Institute of Physics.