A plasma enhanced chemical vapor deposition process to achieve branched carbon nanotubes

被引:33
作者
Abdi, Y. [1 ]
Mohajerzadeh, S. [1 ]
Koohshorkhi, J. [1 ]
Robertson, M. D. [2 ]
Andrei, C. M. [3 ]
机构
[1] Univ Tehran, Dept Elect & Comp Engn, Nanoelect Ctr Excellence, Tehran, Iran
[2] Acadia Univ, Dept Phys, Wolfville, NS B4P 2R6, Canada
[3] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada
关键词
D O I
10.1016/j.carbon.2008.06.059
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Vertically aligned carbon nanotubes (CNTs) have been grown on silicon substrates using nickel as the catalyst layer, acetylene as the carbon source, and hydrogen as the carrier gas. The quality of the CNTs has been examined using transmission and scanning electron microscopy and a tip-growth mechanism with an inner tube diameter of 5-8 nm was observed. The effect of plasma hydrogenation as a post-growth treatment was shown to lead to total or partial removal of the nickel seeds from the CNT tips. Using sequential hydrogenation and growth, it has been possible to achieve tree-like nanostructures. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1611 / 1614
页数:4
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