Analysis of the temperature dependent thermal conductivity of silicon carbide for high temperature applications

被引：79

作者：

Joshi, RP ^{[1
]}

Neudeck, PG

Fazi, C

机构：

[1] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA

[2] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA

[3] USA, Res Lab, Adelphi, MD 20783 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 01期

关键词：

D O I：

10.1063/1.373651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependent thermal conductivity of silicon carbide has been calculated taking into account the various phonon scattering mechanisms. The results compared very well with available experimental data. The inclusion of four-phonon processes is shown to be necessary for obtaining a good match. Several important phonon scattering parameters have been extracted in this study. Dislocations are shown to have a strong effect at 300 K, but not as much at the higher temperatures. (C) 2000 American Institute of Physics. [S0021-8979(00)08513-3].

引用

页码：265 / 269

页数：5

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