Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers

被引：22

作者：

Afanas'ev, V. V. ^{[1
]}

Stesmans, A. ^{[1
]}

Mavrou, G. ^{[2
]}

Dimoulas, A. ^{[2
]}

机构：

[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium

[2] Natl Ctr Sci Res Demokritos, MBE Lab, Inst Mat Sci, Athens 15310, Greece

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期

关键词：

D O I：

10.1063/1.2972123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron energy band alignment between (100)Ge and high-kappa oxide insulators (ZrO2, Gd2O3, La2Hf2O7) grown by the atomic beam deposition method is analyzed using photoemission of electrons from the Ge valence band. Formation of a thin GeO2 passivation layer before the high-kappa deposition is found to significantly reduce the barrier for electrons. However, when La2O3 is deposited as an interlayer, it strongly reacts with the Ge substrate to form a La-Ge-O germanate at the interface, which is found to retain a high barrier for the carriers in Ge. (C) 2008 American Institute of Physics.

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页数：3

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