Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

被引：53

作者：

Afanas'ev, VV

Shamuilia, S

Stesmans, A

Dimoulas, A

Panayiotatos, Y

Sotiropoulos, A

Houssa, M

Brunco, DP

机构：

[1] Univ Louvain, Dept Phys, B-3001 Heverlee, Belgium

[2] Natl Ctr Sci Res Demokritos, Inst Mat Sci, MBE Lab, Athens 15310, Greece

[3] IMEC, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期

关键词：

Rare earth compounds;

D O I：

10.1063/1.2191736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Energy diagrams of interfaces between (100)Ge and several rare-earth oxide insulators deposited from a molecular beam are determined using a combination of internal photoemission and photoconductivity measurements. For the wide band gap (5.9 eV) oxides Gd2O3 and LaHfOx, the band alignment at the interface is found to be close to that of HfO2 and is characterized by conduction/valence band offsets of similar to 2/similar to 3 eV. In contrast, CeO2 which has a much narrower band gap (3.3 eV) does not provide a band alignment diagram corresponding to sufficient insulation. (c) 2006 American Institute of Physics.

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页数：3

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