Energy-band diagram of metal/Lu2O3/silicon structures

被引：54

作者：

Seguini, G ^{[1
]}

Bonera, E ^{[1
]}

Spiga, S ^{[1
]}

Scarel, G ^{[1
]}

Fanciulli, M ^{[1
]}

机构：

[1] INFM, Lab Nazl MDM, I-20041 Agrate Brianza, MI, Italy

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 22期

关键词：

D O I：

10.1063/1.1828600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Internal photoemission spectroscopy has been used to determine the band alignment in Lu2O3 based metal-oxide-semiconductor structures. The Si/Lu2O3 interface conduction- and valence-band offsets were determined to be 2.1+/-0.1 and 2.6+/-0.1 eV, respectively. The energy barrier for electrons at the Al/Lu2O3 interface is 2.4+/-0.1 eV. The value of the Lu2O3 transport band gap, obtained by photoconductivity measurements, was found to be 5.8+/-0.1 eV. Optical absorption spectroscopy gave a value of 4.89+/-0.02 eV for the Lu2O3 optical band gap. (C) 2004 American Institute of Physics.

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页码：5316 / 5318

页数：3

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