Routes toward silicon-based lasers

被引:103
作者
Pavesi, Lorenzo [1 ]
机构
[1] Univ Trent, Dipartimento Fis, I-38050 Povo, Italy
关键词
D O I
10.1016/S1369-7021(04)00675-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon, the material par excellence for electronics, is not used for light sources because of the lack of efficient light emitters and lasers. In this review, I will discuss the physical reasons why silicon is not a laser material and some approaches to make it lasing. I will start with bulk silicon, then I will discuss silicon nanocrystals and Er3+-coupled silicon nanocrystals, where significant advances have been made in the past and can be expected in the near future. I will conclude with an optimistic note on silicon lasing.
引用
收藏
页码:18 / 25
页数:8
相关论文
共 64 条
[31]   The ambipolar Auger coefficient: Measured temperature dependence in electron irradiated and highly injected n-type silicon [J].
Jonsson, P ;
Bleichner, H ;
Isberg, M ;
Nordlander, E .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) :2256-2262
[32]   OPTICAL-PROPERTIES OF PECVD ERBIUM-DOPED SILICON-RICH SILICA - EVIDENCE FOR ENERGY-TRANSFER BETWEEN SILICON MICROCLUSTERS AND ERBIUM IONS [J].
KENYON, AJ ;
TRWOGA, PF ;
FEDERIGHI, M ;
PITT, CW .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (21) :L319-L324
[33]   Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms [J].
Kenyon, AJ ;
Chryssou, CE ;
Pitt, CW ;
Shimizu-Iwayama, T ;
Hole, DE ;
Sharma, N ;
Humphreys, CJ .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) :367-374
[34]   Optical gain in Si/SiO2 lattice:: Experimental evidence with nanosecond pulses [J].
Khriachtchev, L ;
Räsänen, M ;
Novikov, S ;
Sinkkonen, J .
APPLIED PHYSICS LETTERS, 2001, 79 (09) :1249-1251
[35]   Raman scattering from very thin Si layers of Si/SiO2 superlattices:: Experimental evidence of structural modification in the 0.8-3.5 nm thickness region [J].
Khriachtchev, L ;
Räsänen, M ;
Novikov, S ;
Kilpelä, O ;
Sinkkonen, J .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) :5601-5608
[36]   Systematic correlation between Raman spectra, photoluminescence intensity, and absorption coefficient of silica layers containing Si nanocrystals [J].
Khriachtchev, L ;
Räsänen, M ;
Novikov, S ;
Pavesi, L .
APPLIED PHYSICS LETTERS, 2004, 85 (09) :1511-1513
[37]   Gain limiting processes in Er-doped Si nanocrystal waveguides in SiO2 [J].
Kik, PG ;
Polman, A .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) :534-536
[38]   Optical gain and stimulated emission in nanocrystal quantum dots [J].
Klimov, VI ;
Mikhailovsky, AA ;
Xu, S ;
Malko, A ;
Hollingsworth, JA ;
Leatherdale, CA ;
Eisler, HJ ;
Bawendi, MG .
SCIENCE, 2000, 290 (5490) :314-317
[39]   Defect-mediated and resonant optical excitation of Er3+ ions in silicon-rich silicon oxide [J].
Kuritsyn, D ;
Kozanecki, A ;
Przybylinska, H ;
Jantsch, W .
APPLIED PHYSICS LETTERS, 2003, 83 (20) :4160-4162
[40]  
Lee J., 2004, OPT FIB COMM C LOS A