Formation of Sb nanocrystals in SiO2 film using ion implantation followed by thermal annealing

被引：5

作者：

Nakajima, A

Futatsugi, T

Horiguchi, N

Yokoyama, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 11B期

关键词：

metal nanocrystal; Sb; ion implantation; thermal annealing; SiO2; layer;

D O I：

10.1143/JJAP.36.L1552

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report on the fabrication of Sb nanocrystals in SiO2 film, for the first time, These nanocrystals were fabricated by ion implantation followed by thermal annealing. We confirmed their formation in SiO2 via transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) analysis. The size and depth of nanocrystals in him can be controlled by changing the implantation dose and energy. This fabrication method is completely compatible with large-scale integrated (LSI) device fabrication. Thus, it opens up the feasibility of using metal nanocrystals for creating new devices such as high-temperature single-electron devices.

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收藏

页码：L1552 / L1554

页数：3

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