Angular dependence of the electronic energy loss of 800-keV He ions along the Si[100] direction

被引：36

作者：

dosSantos, JHR ^{[1
]}

Grande, PL ^{[1
]}

Behar, M ^{[1
]}

Boudinov, H ^{[1
]}

Schiwietz, G ^{[1
]}

机构：

[1] HAHN MEITNER INST BERLIN GMBH,BEREICH F,D-14109 BERLIN,GERMANY

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.55.4332

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present measurements of the stopping power of 800-keV He-4 ions channeled along the Si[100] axis, as a function of the incidence angle. We compare the experimental results with theoretical calculations by using the impact-parameter-dependent energy loss obtained from the solution of the time-dependent Schrodinger equation through the coupled-channel method. This nonperturbative calculation provides reliable energy-loss results which are in good agreement with the experimental results.

引用

页码：4332 / 4342

页数：11

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