Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors

被引：46

作者：

Li, Flora M. ^{[1
]}

Hsieh, Gen-Wen ^{[1
]}

Dalal, Sharvari ^{[1
]}

Newton, Marcus C. ^{[2
]}

Stott, James E. ^{[2
]}

Hiralal, Pritesh ^{[1
]}

Nathan, Arokia ^{[2
]}

Warburton, Paul A. ^{[2
]}

Unalan, Husnu Emrah ^{[1
]}

Beecher, Paul ^{[1
]}

Flewitt, Andrew J. ^{[1
]}

Robinson, Ian ^{[2
]}

Amaratunga, Gehan ^{[1
]}

Milne, William I. ^{[1
]}

机构：

[1] Univ Cambridge, Elect Engn Div, Cambridge CB3 0FA, England

[2] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

High electron mobility; nanocomposite thin-film transistors (TFTs); nanowires (NWs); organic semiconductors; tetrapods; Zinc Oxide (ZnO);

D O I：

10.1109/TED.2008.2005180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C-61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm(2)V(-1)s(-1), representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 10(6) at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs.

引用

页码：3001 / 3011

页数：11

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