Review of zincblende ZnO: Stability of metastable ZnO phases

被引:242
作者
Ashrafi, A. [1 ]
Jagadish, C. [1 ]
机构
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
基金
澳大利亚研究理事会;
关键词
CUBIC GAN; BAND-GAPS; A-FACE; GROWTH; LAYERS; FILMS; SEMICONDUCTORS; EMISSION; VAPOR; PHOTOLUMINESCENCE;
D O I
10.1063/1.2787957
中图分类号
O59 [应用物理学];
学科分类号
070305 [高分子化学与物理];
摘要
Common II-VI compound semiconducting materials are stable thermodynamically with zincblende phase, while the II-O materials such as zinc oxide (ZnO) and beryllium oxide (BeO) are stable with wurtzite phase, and cadmium oxide (CdO) and magnesium oxide (MgO) are stable in rocksalt phase. This phase disharmony in the same material family laid a challenge for the basic physics and in practical applications in optoelectronic devices, where ternary and quaternary compounds are employed. Thermodynamically the zincblende ZnO is a metastable phase which is free from the giant internal electric fields in the [001] directions and has an easy cleavage facet in the < 110 > directions for laser cavity fabrication that combined with evidence for the higher optical gain. The zincblende materials also have lower ionicity that leads to the lower carrier scattering and higher doping efficiencies. Even with these outstanding features in the zincblende materials, the growth of zincblende ZnO and its fundamental properties are still limited. In this paper, recent progress in growth and fundamental properties of zincblende ZnO material has been reviewed.
引用
收藏
页数:12
相关论文
共 66 条
[1]
ASHRAFI A, 2007, DHAKA U J SCI, V55, P155
[2]
Strain effects in ZnO layers deposited on 6H-SiC [J].
Ashrafi, A. B. M. A. ;
Segawa, Y. ;
Shin, K. ;
Yao, T. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (06)
[3]
Role of ZnS buffer layers in growth of zincblende ZnO on GaAs substrates by metalorganic molecular-beam epitaxy [J].
Ashrafi, AA ;
Ueta, A ;
Kumano, H ;
Suemune, I .
JOURNAL OF CRYSTAL GROWTH, 2000, 221 :435-439
[4]
Nucleation and interface chemistry of ZnO deposited on 6H-SiC -: art. no. 155302 [J].
Ashrafi, ABMA ;
Segawa, Y ;
Shin, K ;
Yao, T .
PHYSICAL REVIEW B, 2005, 72 (15)
[5]
Nucleation and growth modes of ZnO deposited on 6H-SiC substrates [J].
Ashrafi, ABMA ;
Segawa, Y ;
Shin, K ;
Yoo, J ;
Yao, T .
APPLIED SURFACE SCIENCE, 2005, 249 (1-4) :139-144
[6]
High-quality ZnO layers grown on 6H-SiC substrates by metalorganic chemical vapor deposition [J].
Ashrafi, ABMA ;
Zhang, BP ;
Binh, NT ;
Wakatsuki, K ;
Segawa, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (03) :1114-1117
[7]
Ashrafi ABMA, 2002, PHYS STATUS SOLIDI A, V192, P224, DOI 10.1002/1521-396X(200207)192:1<224::AID-PSSA224>3.0.CO
[8]
2-#
[9]
H2O-vapor-activated ZnO growth on a-face sapphire substrates by metalorganic molecular-beam epitaxy [J].
Ashrafi, ABMA ;
Suemune, I ;
Kumano, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (5A) :2851-2854
[10]
Single-crystalline rocksalt CdO layers grown on GaAs(001) substrates by metalorganic molecular-beam epitaxy [J].
Ashrafi, ABMA ;
Kumano, H ;
Suemune, I ;
Ok, YW ;
Seong, TY .
APPLIED PHYSICS LETTERS, 2001, 79 (04) :470-472