Strain effects in ZnO layers deposited on 6H-SiC

被引：8

作者：

Ashrafi, A. B. M. A. ^{[1
]}

Segawa, Y.

Shin, K.

Yao, T.

机构：

[1] Univ Dhaka, Dept Phys, Dhaka 1000, Bangladesh

[2] RIKEN, Frontier Res Syst, Wako, Saitama 3510198, Japan

[3] Changwon Natl Univ, Dept Met & Mat Sci, Chang Won 641773, South Korea

[4] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 06期

关键词：

D O I：

10.1063/1.2345021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Correlation in crystallite sizes and defects of epitaxial ZnO layers deposited on 6H-SiC substrates has been addressed. The biaxial strain governs the ZnO crystallites for the layer thickness of similar to 400 nm. The misfit dislocations were observed in nucleation and theater is the columnar growth mode diffracted in transmission electron microscopy. The columnar growth mode is a symbol of stacking faults that appear due to imbalanced interface chemistry in the II-VI/IV materials system, together with the complex impurity matrix. These defects are the main source of nonradiative recombination centers in ZnO epitaxy resulting in shorter exciton lifetimes examined in time-resolved photoluminescence measurements. (c) 2006 American Institute of Physics.

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页数：5

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