Impact of near-surface defects and morphology on ZnO luminescence

被引：22

作者：

Doutt, D. ^{[1
]}

Mosbacker, H. L.

Cantwell, G. ^{[2
]}

Zhang, J. ^{[2
]}

Song, J. J. ^{[2
]}

Brillson, L. J. ^{[1
,3
]}

机构：

[1] Ohio State Univ, Dept Phys, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] ZN Technol Inc, Brea, CA 92821 USA

[3] Ohio State Univ, Ctr Mat Res, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期

基金：

美国国家科学基金会;

关键词：

atomic force microscopy; cathodoluminescence; crystal growth from melt; crystal growth from solution; crystal growth from vapour; II-VI semiconductors; surface morphology; wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3077015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used depth-resolved cathodoluminescence spectroscopy (DRCLS) to measure the distribution of deep level defects at and below the surface of ZnO crystals grown by vapor phase transport, hydrothermal, and melt-growth methods. DRCLS reveals large variations in defect distributions with depth on a nanometer scale that correlate with maps of potential and surface morphology measured by Kelvin probe force and atomic force (AFM) microscopies, respectively. A strong correlation between the optical emission efficiency of the nanoscale subsurface region and the AFM surface roughness reveals a figure of merit for substrate polishing and etching.

引用

页数：3

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