Influence of strain and buffer layer type on In incorporation during GaInN MOVPE

被引：16

作者：

Scholz, F ^{[1
]}

Off, J

Kniest, A

Görgens, L

Ambacher, O

机构：

[1] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Munich, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 59卷 / 1-3期

关键词：

GaN; GaInN; MOVPE; X-ray diffraction; strain;

D O I：

10.1016/S0921-5107(98)00338-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the growth behaviour of GaN by metalorganic vapor phase epitaxy on various buffer layers. GaInN grown on high quality GaN buffers is coherently strained up to a thickness of similar to 100 nm. When grown on AlGaN, the strain remains unchanged up Co a critical Al content, above which relaxation was observed. In parallel, the In content increased significantly. When grown on lower quality GaN, the strain in our GaInN layers also relaxed and the In content increased. Therefore, we suggested a relation between In incorporation efficiency and defect structure on the growing epilayer surface. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：268 / 273

页数：6

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