Control over size and density of sub-5nm gold dots by retarding-field single ion deposition (RSID)

被引：2

作者：

Hori, M

Goto, T

Woodham, RG

Ahmed, H

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 47卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00244-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Gold dots of 2.5nm mean diameter and 0.8nm standard deviation have been fabricated successfully on chromium oxide (CrOx) thin films using a retarding-field single ion deposition (RSID) technique. The sub-5nm gold dots have been also formed on PMMA and diamond-like carbon (DLC) films with controlling the landing energy and dose of gold ions. The formation of single electron devices, quantum dots, nonopillars and other nano-scale device structures is proposed using the RSID technique.

引用

页码：401 / 403

页数：3

共 3 条

[1]

Single atom scale lithography for single electron devices [J].