Creation of low molecular-weight organic resists for nanometer lithography

Several amorphous molecular materials that function as positive or negative electron-beam resists, to which we refer as molecular resists, have been created. They include 1,3,5-tris[4-(4-toluenesulfonyloxy)phenyl]benzene (TsOTPB), 1,3,5-tris[4-(tert-butoxycarbonylmethoxy)phenyl]benzene (BCMTPB), 4,4',4"-tris(allylsuccinimido)triphenylamine (ASITPA), 1,3,5-tris[2-(4-vinylphenylcarbonyloxy)phenyl]benzene (o-VCTPB), 1,3,5-tris[3-(4-vinylphenylcarbonyloxy)phenyl]benzene (m-VCTPB), and 1,3,5-tris[4-(4-vinylphenylcarbonyloxy)phenyl]benzene (p-VCTPB). These molecular resists permitted the fabrication of line patterns with a high resolution from 150 to 70 nm on exposure to an electron beam.