Resolution-limit study of chain-structure negative resist by electron beam lithography

被引：10

作者：

Manako, S

Fujita, J

Ochiai, Y

Nomura, E

Matsui, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 6A期

关键词：

resist resolution limit; chain-structure negative resist; resist molecular weight; 10-nm-level pattern; electron beam lithography;

D O I：

10.1143/JJAP.36.L724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ne found that low-molecular-weight polystyrene with a chain structure acts as a 10-nm-level high-resolution negative resist in electron beam lithography. The resolution limit is proportion to the molecular weight of the polystyrene resist, The size of the polystyrene resist dot patterns which can be formed decreased with decreasing molecular weight of the polystyrene. Dot patterns of nearly 10 nm in diameter can be formed by a polystyrene resist with a molecular weight of 800.

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页码：L724 / L726

页数：3

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