8 NM WIDE LINE FABRICATION IN PMMA ON SI WAFERS BY ELECTRON-BEAM EXPOSURE

被引：22

作者：

EMOTO, F ^{[1
]}

GAMO, K ^{[1
]}

NAMBA, S ^{[1
]}

SAMOTO, N ^{[1
]}

SHIMIZU, R ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN,SUITA,OSAKA 565,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 10期

关键词：

D O I：

10.1143/JJAP.24.L809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L809 / L811

页数：3

共 7 条

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[2] GAMO K, 1985, J VAC SCI TECHNOL B, V3
[3] DEVELOPER CHARACTERISTICS OF POLY-(METHYL METHACRYLATE) ELECTRON RESIST
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1117 - 1120
[5] RISHTON SA, 1983, 6TH P INT C EL ION B
[6] EXPOSURE AND DEVELOPMENT SIMULATIONS FOR NANOMETER ELECTRON-BEAM LITHOGRAPHY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1367 - 1371
[7] A STABLE HIGH-BRIGHTNESS ELECTRON-GUN WITH ZR/W-TIP FOR NANOMETER LITHOGRAPHY .1. EMISSION PROPERTIES IN SCHOTTKY-EMISSION AND THERMAL FIELD-EMISSION REGIONS
SAMOTO, N
SHIMIZU, R
HASHIMOTO, H
TAMURA, N
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (06): : 766 - 771