Influence of crystalline surface quality on TlBr radiation detector performance

被引：24

作者：

Oliveira, IB ^{[1
]}

Costa, FE

Kiyohara, PK

Hamada, MM

机构：

[1] IPEN, CNEN, BR-05508900 Sao Paulo, Brazil

[2] Univ Sao Paulo, IF, BR-05508900 Sao Paulo, Brazil

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2005年 / 52卷 / 05期

基金：

巴西圣保罗研究基金会;

关键词：

optical microscopy; radiation detector; scanning electron microscopy; surface quality; thallium bromide;

D O I：

10.1109/TNS.2005.856788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, TIBr detectors were fabricated from crystals purified by the multipass zone refining and grown by the Bridgman method. Detectors were prepared using TIBr 0.3-mm-thick wafers, with surface submitted to different mechanical and chemical treatments. Optical microscopy and scanning electron microscopy evaluated the TIBr wafers surface quality. To analyze the surface quality influence in the detector response, systematic measurements of the pulse height spectra and energy resolution were carried out for each prepared radiation detector. The radiation response for these detectors was performed under Am-241 gamma radiation excitation at room temperature. The influence of the surface quality of the TIBr wafer on its performance as a radiation detector was observed.

引用

收藏

页码：2058 / 2062

页数：5

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